FBG20N18BC Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

Part number：	FBG20N18BC
Product classification：	Single FETs, MOSFETs
Manufacturer：	EPC Space
Description：	GAN FET HEMT200V18A COTS 4FSMD-B
Encapsulation：
Packing：	Bulk
Quantity：	62
RoHS status：	NO
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Part number：

FBG20N18BC

Product classification：

Single FETs, MOSFETs

Manufacturer：

EPC Space

Description：

GAN FET HEMT200V18A COTS 4FSMD-B

Encapsulation：

Packing：

Bulk

Quantity：

RoHS status：

TYPE	DESCRIPTION
Mfr	EPC Space
Series	-
Package	Bulk
Product Status	ACTIVE
Package / Case	4-SMD, No Lead
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Rds On (Max) @ Id, Vgs	26mOhm @ 18A, 5V
Vgs(th) (Max) @ Id	2.5V @ 3mA
Supplier Device Package	4-SMD
Drive Voltage (Max Rds On, Min Rds On)	5V
Vgs (Max)	+6V, -4V
Drain to Source Voltage (Vdss)	200 V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 100 V

TYPE

DESCRIPTION

Mfr

EPC Space

Series

Package

Bulk

Product Status

ACTIVE

Package / Case

4-SMD, No Lead

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

GaNFET (Gallium Nitride)

FET Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Rds On (Max) @ Id, Vgs

26mOhm @ 18A, 5V

Vgs(th) (Max) @ Id

2.5V @ 3mA

Supplier Device Package

4-SMD

Drive Voltage (Max Rds On, Min Rds On)

Vgs (Max)

+6V, -4V

Drain to Source Voltage (Vdss)

200 V

Gate Charge (Qg) (Max) @ Vgs

6 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds

900 pF @ 100 V