TYPE | DESCRIPTION |
Mfr | Central Semiconductor |
Series | - |
Package | Box |
Product Status | OBSOLETE |
Mounting Type | Through Hole |
Transistor Type | NPN |
Operating Temperature | -65°C ~ 150°C (TJ) |
Power - Max | 350mW |
Voltage - Collector Emitter Breakdown (Max) | 25V |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
Frequency - Transition | 650MHz |